i have two question
i read the questions and answers and siesta examplebut i want to ask you how
can i do the best geometry optimization(relaxation) when i have a device
before transiesta:
left e + cenrtal region + right electrode.please tell me in details ( geometry
constraint- cg detail). my device is planar graphen nanoribbon . how can i
define electrodes (semi infinte).and if u can please attach one of your
examples2 -when our device has about 500 -1000 atoms . ( 400atoms central and
about 100 atoms electrode) what system can do the siesta-transiesta calculation
? Core i7 6700 cpu 8 core and 32 gb ram in parallel is enough?
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