On 07/29/2015 09:19 AM, Douglas Eadline wrote:

This could change a few things, non-transistor memory.

"An Intel spokesperson categorically denied that it was a phase-change
memory process or a memristor technology. Spin-transfer torque was also
dismissed. Whatever it is, Intel and Micron have been developing it for
about ten years, and together as a joint venture since 2012."

http://www.theplatform.net/2015/07/28/what-a-new-class-of-memory-means-for-the-future-applications/


Did I miss something, or were performance metrics (or at least estimates) completely missing from this article? The one graphics says the cells can switch states 1000x faster than NAND, but what does that mean for a complete package, after all the other memory components are in the picture (bus, controller, etc)?

--
Prentice
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