Thought this might be interesting. NSA granted a series of new patents
these last days...
Yours
Bo Elkjaer

United States Patent 6,084,534 Postol July 4, 2000
Method for efficient storage and transmission of the centroids of a leech
lattice quantizer

Abstract
A method of lattice quantizing a 24-long data point to minimize storage
requirements by acquiring the data point, multiplying each coordinate of
the data point by the square root of 8 to form an inflated data point,
finding the closest point of the inflated Leech lattice by any method,
creating a signal packet, and transmitting the packet to a receiver. The
receiver receives the signal packet, recovers the inflated lattice point
with the aid of a table of 89 of the 4096 codewords of the extended Golay
code, replaces each one in the inflated lattice point by the reciprocal of
the square root of 8 of the same polarity, replaces each 2 in the inflated
lattice point by 2 divided by the square root of 8 of the same polarity,
replaces each 3 in the inflated lattice point by 3 divided by the square
root of 8 of the same polarity, replaces each 4 in the inflated lattice
point by 4 divided by the square root of 8 of the same polarity, and
replaces each 5 in the inflated lattice point by 5 divided by the square
root of 8 of the same polarity in order to recover the data point.
...

United States Patent 6,085,340 Postol July 4, 2000
Method of lattice quantization that minimizes storage requirements and
computational complexity

Abstract
A method of lattice-quantizing an eight-long data point to minimize
storage requirements and computational complexity by acquiring the data
point, multiplying each coordinate of the data point by the square root of
two to form an inflated data point, rounding each coordinate of the
rounded and inflated data point to the nearest integer, reducing
modulo-two each coordinate of the rounded and inflated data point to form
an initial codeword, multiplying a parity-check matrix of an eight-bit
Extending Hamming Code by the result of the last step to form a syndrome,
correcting any single-bit errors and double-bit errors, if any, in the
initial codeword and the rounded and inflated data point, creating a
signal packet if the codeword does not contain any single-bit errors and
double-bit errors, and transmitting the signal packet to a receiver. The
receiver receives the signal packet, recovers the intended codeword from
the table of sixteen codewords in the Extended Hamming Code, modifies the
codeword according to the signal packet in order to recover the rounded
and inflated data point, replaces each one in the rounded and inflated
data point by the reciprocal of the square root of two of the same
polarity, and replaces each two in the rounded and inflated data point by
the square root of two of the same polarity in order to recover the data
point.
...


United States Patent 6,081,634 Attard June 27, 2000
All-fiber optically-controlled optical switch

Abstract
The present invention is an optical switch that includes a first optic
fiber waveguide, a second optic fiber waveguide, and a third optical
waveguide. The three waveguides are in the same plane. The third optical
waveguide may be an optic fiber or a slab waveguide. The first and second
optic fiber waveguides are close enough to exhibit evanescent wave
coupling under non-interference conditions. The second optic fiber
waveguide is between the other two waveguides and closer to the third
optical waveguide. The first and second optic fiber waveguides have
identical propagation constants. An information-bearing optical signal is
applied to the first optic fiber waveguide. An optical control signal
applied to the third optical waveguide controls its propagation constant
and, therefore, controls whether or not switching occurs between the first
and second fiber optic waveguides. The optical switch may be made to be
normally on or normally off.
...


United States Patent 6,081,323 Mahgerefteh , � et al. June 27, 2000
Measurement of Raman gain spectrum in optical fiber

Abstract
An apparatus and method for measuring the spectral dependence of the Raman
gain coefficient in optical fibers is presented. This approach measures
the power level of Raman scattering in both a walk-off limited region and
a physical fiber length limited region and, from these measurements,
extracts the spectral dependence of the Raman gain coefficient. Access to
these two regions is accomplished through control of the excitation pulse
temporal width and relies on fiber dispersion to separate the excitation
light from the Raman scattered light for short pulse widths. This approach
measures the spectral dependence of the Raman gain without the necessity
of absolute power measurement of the Raman scattered light, the need for a
reference standard, or the need of a frequency tunable secondary optical
source.
...


United States Patent 6,080,996
Yang June 27, 2000
Unipolar three-terminal resonant-tunneling transistor

Abstract
The present invention discloses both an n+ and a p+ unipolar,
three-terminal, resonant-tunneling transistor that can be operated as a
hot-electron transistor or a field effect transistor at temperatures at
least as low as 77 degree Kelvin. The doped first terminal (collector or
gate) is made of 3D metal or semiconductor material. An undoped insulating
barrier is deposited on the first terminal. The doped
electrically-contacted second terminal (emitter or source), made of a 2D
semiconductor material, is deposited on the insulating barrier. An undoped
double-barrier resonant-tunneling structure is deposited on the second
terminal. A doped third terminal, made of 3D metal or semiconductor
material, is deposited on a portion of the double-barrier
resonant-tunneling structure. A doped tunneling-contact, made of 3D metal
or semiconductor material, is deposited on the double-barrier
resonant-tunneling structure so that the tunneling contact is isolated
from the third terminal. At a temperature of at least as low as 77 degrees
Kelvin, dc current gain between the third terminal and the
tunneling-contact is observed when a bias voltage or current is applied to
the first terminal. With a bias applied to the first terminal, majority
carriers from the tunneling-contact tunnel through the double-barrier
resonant-tunneling structure to the second terminal. The majority carriers
propagate along the second terminal and tunnel through the double-barrier
resonant-tunneling structure to the third terminal.
...

>>Bevar naturen: Sylt et egern.<<
>>URL: http://www.datashopper.dk/~boo/index.html<<
>>ECHELON URL:<<
>>http://www1.ekstrabladet.dk/netdetect/echelon.iasp<< 

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