Hello developers,
When we simulate the circuit diagram using KiCAD, the Schematic Editor
crashes. Simulating the same circuit diagram on different machines also
results in a crash of the Schematic Editor. The outcome is as shown in the
figure:[image: crash.png]
Our software is used in the following environment:
*Application:*
KiCad Schematic Editor(64-bit)
*Version:*
(6.0.9), release build
*Libraries:*
wxWidgets 3.2.1
libcurl/7.83.1-DEV Schannel zlib/1.2.12
Platform: Windows 11 (build 22621), 64-bit edition, 64 bit, Little endian,
wxMSW
*Build Info:*
Date: Oct 29 2022 23:44:28
wxWidgets: 3.2.1 (wchar_t,wx containers)
Boost: 1.79.0
OCC: 7.6.0
Curl: 7.83.1-DEV
ngspice: 37
Compiler: Visual C++ 1929 without C++ ABI
*Build settings:*
KICAD_USE_OCC=ON
KICAD_SPICE=ON
To facilitate the reproduction of the issue, we have provided the
circuit diagram file (crash.kicad_sh) and the simulation model library
(PN2222.mod and diode.lib) used.
Due to the limitation on uploading files with the .lib extension as
attachments, we have changed the extension to .txt. When reproducing the
issue, please change the extension back to .lib.
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* Sample library of diode model parameters
*
* This is a reduced version of MicroSim's diode model library.
* You are welcome to make as many copies of it as you find convenient.
*
* Release date: 87/06/22
*
* The parameters in this model library were derived from the data
* sheets for each part. The methods used were as follows:
* IS nominal leakage current
* RS for zener diodes: nominal small-signal impedance
* at specified operating current
* IB for zener diodes: set to nominal leakage current
* IBV for zener diodes: at specified operating current
* IBV is adjusted to give the rated zener voltage
*
*
*** Zener Diodes ***
*
* "A" suffix zeners have the same parameters (e.g., 1N750A has the same
* parameters as 1N750)
*
.MODEL D1N752 D (IS=0.5UA RS=6 BV=5.20 IBV=0.5UA)
.MODEL D1N754 D (IS=0.05UA RS=3 BV=6.41 IBV=0.05UA)
.MODEL D1N759 D (IS=0.05UA RS=15 BV=11.37 IBV=0.05UA)
*
*** 1N916 ***
*
.MODEL D1N914 D (IS=100E-15 RS=16 CJO=2PF TT=12NS BV=100 IBV=100E-15)
.MODEL D1N916 D (IS=100E-15 RS=8 CJO=1PF TT=12NS BV=100 IBV=100E-15)
*
*
* ------ Follow is Nippon MicroHard Co. Hal.T -------------------
* TTL SBD Shotkey Barier Diode ina TTL
.model dsbd D(IS=1E-14 RS=264 CJO=0.06pf VJ=0.5 EG=0.69 TT=0.1ns)
* SBD 電源用のＳＢＤ
.model dpsbd D(IS=2E-3 N=2 RS=0.01
+ CJO=1nf TT=10ns BV=40v IBV=100E-15)
*CQ 1988/7
* HItachi Si EP High speed switch
.model d1s2074 D(IS=1.443E-9 N=1.708 RS=1.466
+ CJO=1.92pf VJ=0.4996 M=0.0605 TT=3ns BV=120 IBV=100E-15)
* HItachi Si EP High speed switch
.model d1s2075 D(IS=1.387E-9 N=1.702 RS=1.53
+ CJO=1.92pf VJ=0.4996 M=0.0605 TT=5ns BV=75 IBV=100E-15)
* HItachi Si EP UHF TV AFC P-64
.model d1s2090 D(RS=2.36 CJO=9.96pf VJ=0.9140 M=0.4199 )
* HItachi Si EP UHF TV AFC P-65
.model d1s2267 D(RS=1.18 CJO=25.6pf VJ=2.6510 M=1.0961 )
* HItachi Si EP UHF TV AFC P-65
.model d1s2268 D(RS=1.00 CJO=25.6pf VJ=2.6510 M=1.0961 )
* Shotkey Barier General ????????
.model d1ss16 D(IS=2.18E-6 N=1.07 RS=2.1
+ CJO=1.13pf VJ=1.336 M=0.2244 TT=0.1ns BV=6v IBV=100E-15)
* High-V Switching
.model d1ss81 D(IS=1.10E-8 N=1.98 RS=2.10
+ CJO=1.33pf VJ=0.149 M=0.1023 TT=50ns BV=250 IBV=100E-15)
* High-V Switching
.model d1ss82 D(IS=1.10E-8 N=1.98 RS=2.10
+ CJO=1.33pf VJ=0.149 M=0.1023 TT=50ns BV=300 IBV=100E-15)
* High-V Switching Origin P136/TR 88 dioade manual
.model ded7tv1 D(IS=9.5E-15 N=15.3 RS=5.5
+ CJO=1.33pf VJ=0.149 M=0.1023 TT=500ns BV=7000 IBV=100E-15)
* Hitachi Si SBD UHF-TV tuner Mixer 1ss86
.model d1ss86 D(IS=1.504e-6 N=1.0914 RS=17.64
+ CJO=1.04pf TT=.1ns BV=20 IBV=100E-15)
* Hitachi Si SBD CATV balanced Mixer
.model d1ss88 D(IS=6.47E-10 N=1.0594 RS=11.933
+ CJO=1.04pf VJ=0.294 M=0.1082 TT=.1ns BV=20 IBV=100E-15)
* Hitachi Si SBD General Detector & High speed SW
.model d1ss106 D(IS=2.35E-5 N=2.524 RS=48.12
+ CJO=1.36pf VJ=0.294 M=0.1635 TT=.1ns BV=40 IBV=100E-15)
* Hitachi Si SBD General Detector & High speed SW
.model d1ss108 D(IS=4.86E-5 N=2.105 RS=58.7
+ CJO=1.62pf VJ=2.267 M=0.2857 TT=.1ns BV=60 IBV=100E-15)
* Hitachi Si EP BAND Switching in UHF/VHF TUNER 1992/09/30 Hal.T
*MIN Vbr=35V @ 10uA,
*MAX Ir=0.1uA @ Vr=25v Vf=1.0V @ If=10m C=1.2pF @Vr=6V f=1MHz
*MAX rf=0.9ohm @If=2mA 動作抵抗
*Typ リードインダクタンス 3nH
*動作温度－２０～６０、保存温度－５５～１２５
*許容損失１５０ｍＷ、順電流最大値１５０ｍＡ、逆電圧最大値３５Ｖ
*TT を設定して４３０ＭＨｚ近傍で電流とＲＦ抵抗が一致するようにしている
.model d1ss110 D(IS=3e-11 N=1.645 RS=0.45
+ CJO=1.83pf VJ=0.2327 M=0.1599 TT=.02us BV=60 IBV=100E-15)
* SBD General Switchng for UHF-TV Mixer P112
.model d1ss174 D(IS=2.18E-6 N=1.07 RS=2.1
+ CJO=1.13pf VJ=1.336 M=0.2244 TT=3ns BV=35v IBV=100E-15)
* PIN diode 50v 50ma (@100Mhz 1u=5k 10u=2k 100u=300 1m=50 10m=8 IF=ohm)
.model d1sv99 D(IS=5.67E-10 N=1.9050 RS=0.9725
+ CJO=0.525pf VJ=0.1396 M=0.07550 TT=1us BV=50v IBV=100E-15)
* Hitachi AM tuner VC 1SV134 1v=500pF 4v=130pF 9v=30pF
.model d1sv134 D(CJO=9.17e-10 VJ=4.9775 M=3.3121 BV=70v IBV=100E-15)
* Hitachi GaAs SBD BS-Converter(12GHz) Mixer
* ＢＳコンバーター用１ｓｔミキサ用 ＧａＡｓショットキーバリアヂオード
* Vr=4.0V If=50mA If(peak)=150mA
.model dhse11 D(IS=3.43E-13 N=1.166 RS=1.267
+ CJO=0.29pf VJ=0.292 M=0.1293 TT=.01ns BV=5 IBV=100E-15)
* Hitachi BS tuner VC HVU316
* ＢＳコンバーター用バリキャップ
* Vr,C = (1,6.2p),(5,2.45p),(10,1.25p)
.model dhvu316 D(CJO=8.96pf VJ=3.449 M=1.4477 BV=35 IBV=100E-15)
* Fujitsu tuninge VC FC51 FC51A FC51H
* Vr,C = (1,180p),(4,50p),(10,18p)
.model dFC51 D(CJO=308pf VJ=1.460189 M=1.378011 BV=15 IBV=100E-15)
* Zener diode
.model drd5a D (IS=0.5uA RS=40 BV=5.00 IBV=0.5uA)
.model drd6a D (IS=0.5uA RS=30 BV=6.00 IBV=0.5uA)
.model drd7a D (IS=0.5uA RS=12 BV=7.00 IBV=0.5uA)
.model drd9a D (IS=0.5uA RS=10 BV=9.00 IBV=0.5uA)
.model drd11a D (IS=0.5uA RS=20 BV=11.00 IBV=0.5uA)
.model drd13a D (IS=0.5uA RS=25 BV=13.00 IBV=0.5uA)
.model drd16a D (IS=0.5uA RS=30 BV=16.00 IBV=0.5uA)
.model drd19a D (IS=0.5uA RS=50 BV=19.00 IBV=0.5uA)
.model drd24a D (IS=0.5uA RS=100 BV=24.00 IBV=0.5uA)
*-------------------------------------------------------------
* ＴＲ技術 ９１／６ ｐ５１５
*定電圧ダイオード
.model dz6_8 D(IS=0.1f RS=.25 BV=6.8 Ibv=20u Nbv=.55 Ibv1=2.0m Nbv1=15
+ Cjo=175pF Vj=.75 Fc=.5 Isr=1.86n M=.55 Tbv1=-20u)
*Vz=6.8v @ 10mA M.Okamura
*-------------------------------------------------------------
* ＴＲ技術 ９１／８ ｐ５７６ 接合容量より 容量だけ正確！
*定電圧ダイオード
.model d05z5_3 D (IS=0.5uA RS=60 BV=3.00 IBV=0.5uA
+ CJO=186pF Vj=14.233 M=3.948)
.model d05z5_5 D (IS=0.5uA RS=40 BV=5.00 IBV=0.5uA
+ CJO=83pF Vj=0.2539 M=0.324)
.model d05z5_75 D(IS=0.5uA RS=12 BV=7.50 IBV=0.5uA
+ CJO=39pF Vj=2.808 M=0.753)
.model d05z5_10 D(IS=0.5uA RS=20 BV=10.0 IBV=0.5uA
+ CJO=23pF Vj=8.0 M=1.0 )
.model d05z5_15 D(IS=0.5uA RS=30 BV=15.0 IBV=0.5uA
+ CJO=18pF Vj=14.865 M=2.341)
*ＬＥＤ (1.6V/2mA 1.7V/10mA 1.8V/30mA)
.model dGaAlAs D(IS=6.97e-15 N=2.35 RS=1.3772 BV=15.0 IBV=0.5uA
+ CJO=38pF Vj=0.6323 M=0.323)
*ＬＥＤ (1.7V/1mA 1.8V/3mA 2V/14mA)
.model dGaP D(IS=7.33e-15 N=2.645 RS=1.472 BV=15.0 IBV=0.5uA
+ CJO=19pF Vj=0.6323 M=0.322)
*-------------------------------------------------------------
*200V Valister
.model dvali200 D(IS=0.5uA RS=30 BV=200v IBV=0.5uA
+ CJO=18pF Vj=14.865 M=2.341)
*1.8V limit diode
.model d18v D(IS=1e-29 RS=1 N=1.16473 BV=15.0 IBV=0.5uA
+ CJO=19pF Vj=0.6323 M=0.322)
*-------------------------------------------------------------
*------------------------
*レーザー 1=コモン、レーザー＋ 2=レーザー負 3=センス電流源
*------------------------
.subckt dl3038a 1 2 3
.model dp D(RS=2.36 CJO=9.96pf VJ=0.9140 M=0.4199 )
*GaAlAs Type
.model dr D(IS=6.97e-15 N=2.35 RS=1.3772 BV=15.0 IBV=0.5uA
+ CJO=38pF Vj=0.6323 M=0.323)
d1 1 4 dr
rt 4 2 1
d2 3 1 dp
gp0 1 3 table {V(4,2)}= (0mV,0mA) (40mV,0mA) (100mV,1.2mA)
.ends
*-------------------------------------------------------------
* End of library file
PN2222.mod
Description: MPEG movie
crash.cir
Description: Binary data
crash.kicad_sch
Description: Binary data
