"Eric W. Biederman" wrote: > > Ollie would you know off hand if > a) All 512 in a data page of a doc must be read in a continuous burst? > Or if random access is possible. You have to issue the read command and address for each 512B page. Of course you can start/stop any where in this 512B range. > b) If you can rewrite the sram from the processor. > No, the SRAM area is not accessable for software. It is automatically downloaded for the NAND flash in DoC. > > Or, Ollie, can we program the SDRAM very conservatively and then reprogram > > it later? I know this was not possible on the 630. > I don't think so. But I have not read the register spec/programming guide. Ollie
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Ronald G Minnich
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Ronald G Minnich
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Ronald G Minnich
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Ronald G Minnich
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Thomas J. Merritt
- Re: SIS 730/SIS 735 Ollie Lho
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Ronald G Minnich
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Thomas J. Merritt
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Thomas J. Merritt
- Re: SIS 730/SIS 735 Eric W. Biederman
- RE: SIS 730/SIS 735 Hamish Guthrie \(Mail Lists\)
- Re: SIS 730/SIS 735 Eric W. Biederman
- Re: SIS 730/SIS 735 Thomas J. Merritt
