Re: [Ifeffit] Feature near edge of Ni XANES spectrum

2016-02-09 Thread Ritimukta Sarangi
Hello Aditya,
If I understand correctly, the nomenclature you are using is a little
misleading. The sharp feature that you are referring to is a rising-edge
feature and is not after the edge. The is a classic feature for square
planar complexes and Ni does form a lot of those. The origin of this
feature has been argued (in molecular systems) to be either:

1) Valence bond configuration interaction feature (VBCI), which is a
formally forbidden 2 -electron transfer process. It gains intensity with
covalent overlap of metal with ligands and has been shown (in the case of
Cu(III) which is isoelectronic to Ni(II)) to increase with metal-ligand
bond strength.

2) It has also been attributed to longer-range multiple scattering.

It is important to realize that both effect increase in square planar
systems and usually such a feature is the hallmark of a square planar
molecule.
Best,
Riti

On Tue, Feb 9, 2016 at 6:19 PM, Aditya Shivprasad  wrote:

> Dear list,
>
> I have obtained nickel XANES spectra (attached) from metallic Zircaloy-2
> nuclear fuel cladding (Zr, 1.5% Sn, 0.15% Fe,  0.1% Cr, 0.05% Ni).
>
> In the spectrum, I identify the edge as being approximately 8331-8332 eV
> (based on maximum of first derivative), as it is for pure Ni. However, I
> also identify a sharp feature at less than 1 eV past the edge. If anyone on
> the list could help me to understand the origin of this feature, that would
> be very helpful.
>
> Thanks
> --
> Aditya Shivprasad
>
> aps...@psu.edu
> Ph.D Candidate
> Nuclear Engineering Department
> Pennsylvania State University
>
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[Ifeffit] Feature near edge of Ni XANES spectrum

2016-02-09 Thread Aditya Shivprasad
Dear list,

I have obtained nickel XANES spectra (attached) from metallic Zircaloy-2
nuclear fuel cladding (Zr, 1.5% Sn, 0.15% Fe,  0.1% Cr, 0.05% Ni).

In the spectrum, I identify the edge as being approximately 8331-8332 eV
(based on maximum of first derivative), as it is for pure Ni. However, I
also identify a sharp feature at less than 1 eV past the edge. If anyone on
the list could help me to understand the origin of this feature, that would
be very helpful.

Thanks
-- 
Aditya Shivprasad

aps...@psu.edu
Ph.D Candidate
Nuclear Engineering Department
Pennsylvania State University


Ni in Zircaloy-2.prj
Description: Binary data
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Re: [Ifeffit] Ifeffit Digest, Vol 156, Issue 4

2016-02-09 Thread Matthew Marcus

I have an SDD and find very little strength in the escape peak or the Si Ka 
peak.  I have seen Si from the sample.  I can't speak to how well Si XAS works 
because my beamline doesn't go down that far.
mam

On 2/9/2016 10:25 AM, Pierre Lecante wrote:

Hi Pinit,

here is what you can expect from a SDD:

"At X-ray energies greater than silicon K absorption edge, which we have measured 
for crystalline silicon to be 1839 eV, the response function of the device shows two 
distinct peaks in addition to the primary one. One of them at energy /E/_/f/ = 1739 eV is 
due to the silicon fluorescent photons that have escaped far enough from the original 
site of interaction to be detected as a separate event. The other peak centered at energy 
/E/_/e/ = /E/_0 - /E/_/f/ , where /E/_0 is energy of the incident photon, is called an 
escape peak."

So, indeed this shouldn't be a concern if you had a perfect rejection of 
harmonics on your beamline; if not, inelastic scattering of harmonic by the 
sample, even rejected by energy analysis,  should likely induce internal 
fluorescence and escape peaks not observed in TM. Just an hypothesis, but easy 
to check: presence or not of harmonic in your scattering.

Pierre

Le 02/02/2016 23:41, ifeffit-requ...@millenia.cars.aps.anl.gov a écrit :

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Today's Topics:

1. Re: Could you please give me some information? (Bruce Ravel)
2. Re: Athena with IOS "El Capitan" (Manuel Cossio Kohler)
3. Re: Athena with IOS "El Capitan" (Bruce Ravel)
4. Re: Athena with IOS "El Capitan" (Manuel Cossio Kohler)


--

Message: 1
Date: Tue, 2 Feb 2016 15:30:45 -0500
From: Bruce Ravel
To: pinit
Cc: XAFS Analysis using Ifeffit
Subject: Re: [Ifeffit] Could you please give me some information?
Message-ID:<56b111f5.7050...@bnl.gov>
Content-Type: text/plain; charset=windows-1252; format=flowed

On 02/01/2016 11:58 PM, pinit wrote:

Dear Bruce,

I am Pinit from SLRI, Thailand. I have some questions concerning the
Si-drift detector.

Could you give me some suggestions if Si-detector can detect the
corrected Si K-edge or not? This is because I have seen a significant
EXAFS signal (higher in amplitude in FT) measured by Si-drift detector
differs from Lytle detector or ionization chambers (TM mode).

Hi Pinit,

Nice to hear from you.  I am CCing my answer to the Ifeffit Mailing
List.  Someone else may have more insight into your question than I
do.  You should CC the list in your response.

I'd probably need to know more about the sample and the nature of the
measurement you made to understand why you are seeing a different
signal with the Si drift detector.

Normally one would expect that he EXAFS would be /attenuated/ either
due to self-absorption or due to the energy dependence of the I0
detector.  That you are seeing a larger EXAFS signal with the Si-drift
seems surprising.

One thing that occurs to me is that the Compton and elastic peaks
probably overlap the Si K alpha ROI quite a bit, even extending into
the EXAFS region.  I would have thought that, too, would serve to
attenuate the EXAFS (but maybe I am thinking about that wrongly).

Perhaps it would help to show us some of the data...?

B






--
Groupe MC2
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France
Tel: +33 (0)5 62 25 78 51, Fax: +33 (0)5 62 25 79 99
Email:leca...@cemes.fr


http://www.cemes.fr/MC2

Full list of publications:
http://www.researcherid.com/rid/A-8745-2011



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Re: [Ifeffit] Could you please give me some information?

2016-02-09 Thread Pierre Lecante

Hi Pinit,

here is what you can expect from a SDD:

"At X-ray energies greater than silicon K absorption edge, which we have 
measured for crystalline silicon to be 1839 eV, the response function of 
the device shows two distinct peaks in addition to the primary one. One 
of them at energy /E/_/f/ = 1739 eV is due to the silicon fluorescent 
photons that have escaped far enough from the original site of 
interaction to be detected as a separate event. The other peak centered 
at energy /E/_/e/ = /E/_0 - /E/_/f/ , where /E/_0 is energy of the 
incident photon, is called an escape peak."


So, indeed this shouldn't be a concern if you had a perfect rejection of 
harmonics on your beamline; if not, inelastic scattering of harmonic by 
the sample, even rejected by energy analysis,  should likely induce 
internal fluorescence and escape peaks not observed in TM. Just an 
hypothesis, but easy to check: presence or not of harmonic in your 
scattering.


Pierre

Le 02/02/2016 23:41, ifeffit-requ...@millenia.cars.aps.anl.gov a écrit :

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When replying, please edit your Subject line so it is more specific
than "Re: Contents of Ifeffit digest..."


Today's Topics:

1. Re: Could you please give me some information? (Bruce Ravel)
2. Re: Athena with IOS "El Capitan" (Manuel Cossio Kohler)
3. Re: Athena with IOS "El Capitan" (Bruce Ravel)
4. Re: Athena with IOS "El Capitan" (Manuel Cossio Kohler)


--

Message: 1
Date: Tue, 2 Feb 2016 15:30:45 -0500
From: Bruce Ravel 
To: pinit 
Cc: XAFS Analysis using Ifeffit 
Subject: Re: [Ifeffit] Could you please give me some information?
Message-ID: <56b111f5.7050...@bnl.gov>
Content-Type: text/plain; charset=windows-1252; format=flowed

On 02/01/2016 11:58 PM, pinit wrote:

Dear Bruce,

I am Pinit from SLRI, Thailand. I have some questions concerning the
Si-drift detector.

Could you give me some suggestions if Si-detector can detect the
corrected Si K-edge or not? This is because I have seen a significant
EXAFS signal (higher in amplitude in FT) measured by Si-drift detector
differs from Lytle detector or ionization chambers (TM mode).

Hi Pinit,

Nice to hear from you.  I am CCing my answer to the Ifeffit Mailing
List.  Someone else may have more insight into your question than I
do.  You should CC the list in your response.

I'd probably need to know more about the sample and the nature of the
measurement you made to understand why you are seeing a different
signal with the Si drift detector.

Normally one would expect that he EXAFS would be /attenuated/ either
due to self-absorption or due to the energy dependence of the I0
detector.  That you are seeing a larger EXAFS signal with the Si-drift
seems surprising.

One thing that occurs to me is that the Compton and elastic peaks
probably overlap the Si K alpha ROI quite a bit, even extending into
the EXAFS region.  I would have thought that, too, would serve to
attenuate the EXAFS (but maybe I am thinking about that wrongly).

Perhaps it would help to show us some of the data...?

B






--
Groupe MC2
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France
Tel: +33 (0)5 62 25 78 51, Fax: +33 (0)5 62 25 79 99
Email:  leca...@cemes.fr


http://www.cemes.fr/MC2

Full list of publications:
http://www.researcherid.com/rid/A-8745-2011

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Re: [Ifeffit] Ifeffit Digest, Vol 156, Issue 4

2016-02-09 Thread Pierre Lecante

Hi Pinit,

here is what you can expect from a SDD:

"At X-ray energies greater than silicon K absorption edge, which we have 
measured for crystalline silicon to be 1839 eV, the response function of 
the device shows two distinct peaks in addition to the primary one. One 
of them at energy /E/_/f/ = 1739 eV is due to the silicon fluorescent 
photons that have escaped far enough from the original site of 
interaction to be detected as a separate event. The other peak centered 
at energy /E/_/e/ = /E/_0 - /E/_/f/ , where /E/_0 is energy of the 
incident photon, is called an escape peak."


So, indeed this shouldn't be a concern if you had a perfect rejection of 
harmonics on your beamline; if not, inelastic scattering of harmonic by 
the sample, even rejected by energy analysis,  should likely induce 
internal fluorescence and escape peaks not observed in TM. Just an 
hypothesis, but easy to check: presence or not of harmonic in your 
scattering.


Pierre

Le 02/02/2016 23:41, ifeffit-requ...@millenia.cars.aps.anl.gov a écrit :

Send Ifeffit mailing list submissions to
ifeffit@millenia.cars.aps.anl.gov

To subscribe or unsubscribe via the World Wide Web, visit
http://millenia.cars.aps.anl.gov/mailman/listinfo/ifeffit
or, via email, send a message with subject or body 'help' to
ifeffit-requ...@millenia.cars.aps.anl.gov

You can reach the person managing the list at
ifeffit-ow...@millenia.cars.aps.anl.gov

When replying, please edit your Subject line so it is more specific
than "Re: Contents of Ifeffit digest..."


Today's Topics:

1. Re: Could you please give me some information? (Bruce Ravel)
2. Re: Athena with IOS "El Capitan" (Manuel Cossio Kohler)
3. Re: Athena with IOS "El Capitan" (Bruce Ravel)
4. Re: Athena with IOS "El Capitan" (Manuel Cossio Kohler)


--

Message: 1
Date: Tue, 2 Feb 2016 15:30:45 -0500
From: Bruce Ravel 
To: pinit 
Cc: XAFS Analysis using Ifeffit 
Subject: Re: [Ifeffit] Could you please give me some information?
Message-ID: <56b111f5.7050...@bnl.gov>
Content-Type: text/plain; charset=windows-1252; format=flowed

On 02/01/2016 11:58 PM, pinit wrote:

Dear Bruce,

I am Pinit from SLRI, Thailand. I have some questions concerning the
Si-drift detector.

Could you give me some suggestions if Si-detector can detect the
corrected Si K-edge or not? This is because I have seen a significant
EXAFS signal (higher in amplitude in FT) measured by Si-drift detector
differs from Lytle detector or ionization chambers (TM mode).

Hi Pinit,

Nice to hear from you.  I am CCing my answer to the Ifeffit Mailing
List.  Someone else may have more insight into your question than I
do.  You should CC the list in your response.

I'd probably need to know more about the sample and the nature of the
measurement you made to understand why you are seeing a different
signal with the Si drift detector.

Normally one would expect that he EXAFS would be /attenuated/ either
due to self-absorption or due to the energy dependence of the I0
detector.  That you are seeing a larger EXAFS signal with the Si-drift
seems surprising.

One thing that occurs to me is that the Compton and elastic peaks
probably overlap the Si K alpha ROI quite a bit, even extending into
the EXAFS region.  I would have thought that, too, would serve to
attenuate the EXAFS (but maybe I am thinking about that wrongly).

Perhaps it would help to show us some of the data...?

B






--
Groupe MC2
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France
Tel: +33 (0)5 62 25 78 51, Fax: +33 (0)5 62 25 79 99
Email:  leca...@cemes.fr


http://www.cemes.fr/MC2

Full list of publications:
http://www.researcherid.com/rid/A-8745-2011

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