Re: [PATCH v2 07/10] sunxi: Parameterize bit delay code in H616 DRAM driver
On Mon, 10 Apr 2023 10:21:16 +0200
Jernej Skrabec wrote:
> These values are highly board specific and thus make sense to add
> parameter for them. To ease adding support for new boards, let's make
> them same as in vendor DRAM settings.
>
> Signed-off-by: Jernej Skrabec
Some bits still look odd, as mentioned in the previous review, but I
guess there is really not much we can do about it. Meh. Seems to work,
though, and the values seem to match before and after, so:
Reviewed-by: Andre Przywara
Cheers,
Andre
> ---
> .../include/asm/arch-sunxi/dram_sun50i_h616.h | 3 +
> arch/arm/mach-sunxi/Kconfig | 18 ++
> arch/arm/mach-sunxi/dram_sun50i_h616.c| 189 +-
> configs/x96_mate_defconfig| 2 +
> 4 files changed, 163 insertions(+), 49 deletions(-)
>
> diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> index dbdc6b694ec1..034ba98bc243 100644
> --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
> @@ -155,7 +155,10 @@ struct dram_para {
> u32 dx_odt;
> u32 dx_dri;
> u32 ca_dri;
> + u32 odt_en;
> u32 tpr10;
> + u32 tpr11;
> + u32 tpr12;
> };
>
>
> diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
> index 4300d388e066..7b38e83c2d7e 100644
> --- a/arch/arm/mach-sunxi/Kconfig
> +++ b/arch/arm/mach-sunxi/Kconfig
> @@ -67,11 +67,29 @@ config DRAM_SUN50I_H616_CA_DRI
> help
> CA DRI value from vendor DRAM settings.
>
> +config DRAM_SUN50I_H616_ODT_EN
> + hex "H616 DRAM ODT EN parameter"
> + default 0x1
> + help
> + ODT EN value from vendor DRAM settings.
> +
> config DRAM_SUN50I_H616_TPR10
> hex "H616 DRAM TPR10 parameter"
> help
> TPR10 value from vendor DRAM settings. It tells which features
> should be configured, like write leveling, read calibration, etc.
> +
> +config DRAM_SUN50I_H616_TPR11
> + hex "H616 DRAM TPR11 parameter"
> + default 0x0
> + help
> + TPR11 value from vendor DRAM settings.
> +
> +config DRAM_SUN50I_H616_TPR12
> + hex "H616 DRAM TPR12 parameter"
> + default 0x0
> + help
> + TPR12 value from vendor DRAM settings.
> endif
>
> config SUN6I_PRCM
> diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c
> b/arch/arm/mach-sunxi/dram_sun50i_h616.c
> index 3fe45845b78e..f5d8718fefff 100644
> --- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
> +++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
> @@ -574,7 +574,7 @@ static bool mctl_phy_write_training(struct dram_para
> *para)
>
> static void mctl_phy_bit_delay_compensation(struct dram_para *para)
> {
> - u32 *ptr;
> + u32 *ptr, val;
> int i;
>
> if (para->tpr10 & TPR10_DX_BIT_DELAY1) {
> @@ -582,49 +582,93 @@ static void mctl_phy_bit_delay_compensation(struct
> dram_para *para)
> setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
> clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
>
> + if (para->tpr10 & BIT(30))
> + val = para->tpr11 & 0x3f;
> + else
> + val = (para->tpr11 & 0xf) << 1;
> +
> ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
> for (i = 0; i < 9; i++) {
> - writel_relaxed(0x16, ptr);
> - writel_relaxed(0x16, ptr + 0x30);
> + writel_relaxed(val, ptr);
> + writel_relaxed(val, ptr + 0x30);
> ptr += 2;
> }
> - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
> - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
> - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
> - writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
> +
> + if (para->tpr10 & BIT(30))
> + val = (para->odt_en >> 15) & 0x1e;
> + else
> + val = (para->tpr11 >> 15) & 0x1e;
> +
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4d0);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x590);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4cc);
> + writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x58c);
> +
> + if (para->tpr10 & BIT(30))
> + val = (para->tpr11 >> 8) & 0x3f;
> + else
> + val = (para->tpr11 >> 3) & 0x1e;
>
> ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
> for (i = 0; i < 9; i++) {
> - writel_relaxed(0x1a, ptr);
> - writel_relaxed(0x1a, ptr + 0x30);
> + writel_relaxed(val, ptr);
> + writel_relaxed(val, ptr + 0x30);
> ptr += 2;
> }
> - writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
> -
[PATCH v2 07/10] sunxi: Parameterize bit delay code in H616 DRAM driver
These values are highly board specific and thus make sense to add
parameter for them. To ease adding support for new boards, let's make
them same as in vendor DRAM settings.
Signed-off-by: Jernej Skrabec
---
.../include/asm/arch-sunxi/dram_sun50i_h616.h | 3 +
arch/arm/mach-sunxi/Kconfig | 18 ++
arch/arm/mach-sunxi/dram_sun50i_h616.c| 189 +-
configs/x96_mate_defconfig| 2 +
4 files changed, 163 insertions(+), 49 deletions(-)
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
index dbdc6b694ec1..034ba98bc243 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
@@ -155,7 +155,10 @@ struct dram_para {
u32 dx_odt;
u32 dx_dri;
u32 ca_dri;
+ u32 odt_en;
u32 tpr10;
+ u32 tpr11;
+ u32 tpr12;
};
diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
index 4300d388e066..7b38e83c2d7e 100644
--- a/arch/arm/mach-sunxi/Kconfig
+++ b/arch/arm/mach-sunxi/Kconfig
@@ -67,11 +67,29 @@ config DRAM_SUN50I_H616_CA_DRI
help
CA DRI value from vendor DRAM settings.
+config DRAM_SUN50I_H616_ODT_EN
+ hex "H616 DRAM ODT EN parameter"
+ default 0x1
+ help
+ ODT EN value from vendor DRAM settings.
+
config DRAM_SUN50I_H616_TPR10
hex "H616 DRAM TPR10 parameter"
help
TPR10 value from vendor DRAM settings. It tells which features
should be configured, like write leveling, read calibration, etc.
+
+config DRAM_SUN50I_H616_TPR11
+ hex "H616 DRAM TPR11 parameter"
+ default 0x0
+ help
+ TPR11 value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_TPR12
+ hex "H616 DRAM TPR12 parameter"
+ default 0x0
+ help
+ TPR12 value from vendor DRAM settings.
endif
config SUN6I_PRCM
diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c
b/arch/arm/mach-sunxi/dram_sun50i_h616.c
index 3fe45845b78e..f5d8718fefff 100644
--- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
+++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
@@ -574,7 +574,7 @@ static bool mctl_phy_write_training(struct dram_para *para)
static void mctl_phy_bit_delay_compensation(struct dram_para *para)
{
- u32 *ptr;
+ u32 *ptr, val;
int i;
if (para->tpr10 & TPR10_DX_BIT_DELAY1) {
@@ -582,49 +582,93 @@ static void mctl_phy_bit_delay_compensation(struct
dram_para *para)
setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
+ if (para->tpr10 & BIT(30))
+ val = para->tpr11 & 0x3f;
+ else
+ val = (para->tpr11 & 0xf) << 1;
+
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x16, ptr);
- writel_relaxed(0x16, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
+
+ if (para->tpr10 & BIT(30))
+ val = (para->odt_en >> 15) & 0x1e;
+ else
+ val = (para->tpr11 >> 15) & 0x1e;
+
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4d0);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x590);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4cc);
+ writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x58c);
+
+ if (para->tpr10 & BIT(30))
+ val = (para->tpr11 >> 8) & 0x3f;
+ else
+ val = (para->tpr11 >> 3) & 0x1e;
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
+ writel_relaxed(val, ptr);
+ writel_relaxed(val, ptr + 0x30);
ptr += 2;
}
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+
+ if (para->tpr10 & BIT(30))
+ val = (para->odt_en >> 19) & 0x1e;
+ else
+ val = (para->tpr11 >> 19) & 0x1e;
+
+
