[Pw_forum] Si diamond-cubic to beta-Sn transformation

2010-10-05 Thread Daryl Chrzan
Colleagues, 

I am working through a problem that I have assigned to my Computational 
Materials Science class - computation of the transition pressure for the 
diamond-cubic to beta-Sn structures in diamond using pw.x.  The problem I have 
is that pw.x produces answers that are inconsistent with those produced by 
VASP, and those published in the literature.  I have used similar ultrasoft 
pseudopotentials in both calculations (both based on PW91 correlation).  There 
may be differences, between the two cases, but I have tried a number of 
pseudopotentials in pw.x and find essentially the same results).  I have 
installed the QE software version 4.2.1 using both gfortran and ifort, using 
entirely internal libraries and with MKL (32 bit) libraries, both openMPI and 
single processor mode, and the tests of pw.x all conclude successfully).  The 
software is installed on a Mac OSX 10.6 laptop.  I have compiled in 32 and 64 
bit mode for gfortran.  If memory serves me correctly, all produce essentially 
the same results.

Though I have generated a number of discrepancies, I think the most simple 
manifestation is the difference in total energy per atom for the equilibrium 
structures as predicted by VASP.  More specifically, I find:

(1) Diamond cubic structure in VASP.  Relaxed structure (pressure ~ 0).  
K=Point mesh is 12 x 12 x 12, symmetrized.  The lattice parameter comes out to 
be 5.456 Ang.  Ultrasoft pseudopotential, PW91 exchange-correlation, cutoff 
chosen to be 400 eV.  Total energy of relaxed cell = -10.80 eV. 

(2) Diamond cubic structure run using beta-Sn POSCAR with c/a = sqrt(2).  
Produces the same lattice parameter and the same total energy per relaxed cell 
= -10.866649 eV.

(3) Beta-Sn structure also relaxed using the same potential yields a lattice 
parameter a = 4.832 Ang, and the ratio c/a = 0.547.  Using the same k-point 
mesh (perhaps not completely converged, but close enough for our purposes) one 
finds a total energy of this phase to be -10.191998 eV.

(4) Using these numbers, and noting that there are two atoms per unit cell, one 
finds that the energy difference per atom between the structures is given by
E(BetaSn Si)- E(DC Si)  = (-10.191998+10.80)/2 
eV/atom
= 0.34 eV/atom

This value is in very good agreement with published results.  We can now take 
these structural parameters and run pw.x from QE to compute the energy 
difference.  I will use the beta-Sn unit cell for both calculations (the 
natural diamond cubic cell produces essentially the same results).  I also used 
a MP grid 12x12x12 and an energy cutoff of 400 eV (12*400 eV for the charge 
density).

(5) The total energy of the beta-Sn structure, per atom, predicted by QE is 
-130.192 eV.  The total energy of the dc structure, per atom, predicted by QE 
is -130.982 eV.  The difference in energy is, therefore, 0.79 eV/atom, more 
than a factor of two larger than predicted by VASP. I've attached the input 
files and the output files for your perusal.

Sorry about the size of this message. Any insight you can lend will be more 
than appreciated.

Thank you,

Daryl C. Chrzan
Professor, Materials Science and Engineering
University of California
Berkeley, CA 94720

and

Materials Sciences Division
Lawrence Berkeley National Laboratory
Berkeley, CA 94720

ph./fax: 510 643 1624




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[Pw_forum] Si diamond-cubic to beta-Sn transformation

2010-10-05 Thread Daryl Chrzan
Input files were stripped on the previous message.  Here they are as part of 
the message:

Diamond Cubic:

 &control
calculation='scf'
restart_mode='from_scratch',
prefix='silicon',
tstress= .true.
tprnfor= .true.
pseudo_dir='/Users/darylchrzan/ResearchProjects/PSEUDOS/',
outdir='/Users/darylchrzan/Desktop/MSE215Fall2010/Assignments/One/BetaSn/tmp/'
/
&system
ibrav=0,
celldm(1)=7.29052,
nat=2,
ntyp=1,
ecutwfc=29.3991,
ecutrho=352.789,
nbnd=8,
smearing = 'gaussian',
degauss = 0.02,
/
 &electrons
diagonalization='cg'
mixing_mode='plain'
mixing_beta=0.7,
conv_thr=3.0d-7,
/
ATOMIC_SPECIES
Si 28.086 Si.pw91-n-van.UPF
ATOMIC_POSITIONS crystal
Si -0.125  0.125 -0.250 0 0 0
Si 0.125  -0.125  0.250 0 0 0
K_POINTS automatic
12 12 12 0 0 0
CELL_PARAMETERS
-0.5  0.5  0.707107
0.5 -0.5  0.707107
0.5  0.5 -0.707107


Beta-Sn: 

 &control
calculation='scf'
restart_mode='from_scratch',
prefix='silicon',
tstress= .true.
tprnfor= .true.
pseudo_dir='/Users/darylchrzan/ResearchProjects/PSEUDOS/',
outdir='/Users/darylchrzan/Desktop/MSE215Fall2010/Assignments/One/BetaSn/tmp/'
/
&system
ibrav=0,
celldm(1)=9.13116,
nat=2,
ntyp=1,
ecutwfc=29.3991,
ecutrho=352.789,
nbnd=8,
smearing = 'gaussian',
degauss = 0.02,
/
 &electrons
diagonalization='cg'
mixing_mode='plain'
mixing_beta=0.7,
conv_thr=3.0d-7,
/
ATOMIC_SPECIES
Si 28.086 Si.pw91-n-van.UPF
ATOMIC_POSITIONS crystal
Si -0.125  0.125 -0.250 0 0 0
Si 0.125  -0.125  0.250 0 0 0
K_POINTS automatic
12 12 12 0 0 0
CELL_PARAMETERS
-0.5  0.5  0.2735
0.5 -0.5  0.2735
0.5  0.5 -0.2735



Daryl C. Chrzan
Professor, Materials Science and Engineering
University of California
Berkeley, CA 94720

and

Materials Sciences Division
Lawrence Berkeley National Laboratory
Berkeley, CA 94720

ph./fax: 510 643 1624









[Pw_forum] Si diamond-cubic to beta-Sn transformation

2010-10-08 Thread Daryl Chrzan
Michael,

Thank you for the response.  I agree that I am far from the minimum.  However, 
when I do get to the minimum, I end up with a c/a ratio that is far off, and an 
energy difference of 0.6 eV, about twice what you find.  (I have, I believe, 
accounted for the proper number of atoms, etc.)  

I have done the calculation with the PAW potential and the PZ-vbc potential and 
obtained the same results.  Obviously I am doing something wrong but I simply 
cannot see it.  I'll try the Si.pbe-n-van.UPF and see if I can reproduce your 
0.29 eV energy difference.  Did you c/a work out to be around 0.547?

Daryl

Daryl C. Chrzan
Professor, Materials Science and Engineering
University of California
Berkeley, CA 94720

and

Materials Sciences Division
Lawrence Berkeley National Laboratory
Berkeley, CA 94720

ph./fax: 510 643 1624






[Pw_forum] Si diamond-cubic to beta-Sn transformation

2010-10-08 Thread Daryl Chrzan
Paolo,

The smearing flag solved the problems.  Thank you much for the tip (on behalf 
of myself and my class).  I agree this is an excellent teaching exercise.  Mark 
Asta suggested it to me, and it seems perfect.

I still believe that there are 2 atoms per unit cell in the beta-Sn structure, 
so I am a bit confused by your final statement.  I suppose this depends on the 
choice of lattice vectors...

Daryl

Daryl C. Chrzan
Professor, Materials Science and Engineering
University of California
Berkeley, CA 94720

and

Materials Sciences Division
Lawrence Berkeley National Laboratory
Berkeley, CA 94720

ph./fax: 510 643 1624