Hi Gene,
The usually quoted formula is:
IS = A*exp(-Eg/(k*T)
Where
IS = saturation current,
A is nearly constant independent of temperature and dependent on
diffusion coefficients of electrons and holes.
k is the Boltzmann constant. ν is a constant; 1 for germanium and 2
for silicon; and
T is the
I'm trying to find some info on the temperature variation of the reverse
saturation current of a diode. Anyone know about this?
gene
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