Re: [Qemu-devel] [PATCH v4] ARM: Exynos4210 IRQ: Introduce new IRQ gate functionality.

2012-04-24 Thread Evgeny Voevodin
On 24.04.2012 20:17, Peter Maydell wrote: On 24 April 2012 05:19, Evgeny Voevodin wrote: New IRQ gate consists of n_in input qdev gpio lines and one output sysbus IRQ line. The output IRQ level is formed as OR between all gpio inputs. Signed-off-by: Evgeny Voevodin Reviewed-by: Peter Maydell

Re: [Qemu-devel] [PATCH v4] ARM: Exynos4210 IRQ: Introduce new IRQ gate functionality.

2012-04-24 Thread Peter Maydell
On 24 April 2012 05:19, Evgeny Voevodin wrote: > New IRQ gate consists of n_in input qdev gpio lines and one > output sysbus IRQ line. The output IRQ level is formed as OR > between all gpio inputs. > > Signed-off-by: Evgeny Voevodin Reviewed-by: Peter Maydell Not convinced it's worth putting

[Qemu-devel] [PATCH v4] ARM: Exynos4210 IRQ: Introduce new IRQ gate functionality.

2012-04-23 Thread Evgeny Voevodin
New IRQ gate consists of n_in input qdev gpio lines and one output sysbus IRQ line. The output IRQ level is formed as OR between all gpio inputs. Signed-off-by: Evgeny Voevodin --- hw/exynos4210.c | 32 +++-- hw/exynos4210.h |2 +- hw/exynos4210_gic.c | 78 +++

Re: [Qemu-devel] [PATCH v4] ARM: Exynos4210 IRQ: Introduce new IRQ gate functionality.

2012-04-23 Thread Evgeny Voevodin
Sorry, sent an old version. New version will be in next answer. -- Kind regards, Evgeny Voevodin, Leading Software Engineer, ASWG, Moscow R&D center, Samsung Electronics e-mail: e.voevo...@samsung.com

[Qemu-devel] [PATCH v4] ARM: Exynos4210 IRQ: Introduce new IRQ gate functionality.

2012-04-23 Thread Evgeny Voevodin
New IRQ gate consists of n_in input qdev gpio lines and one output sysbus IRQ line. The output IRQ level is formed as OR between all gpio inputs. Signed-off-by: Evgeny Voevodin --- hw/exynos4210.c | 32 +++- hw/exynos4210.h |2 +- hw/exynos4210_gic.c | 79