t: Re: [Pw_forum] Carrier concentration in Si
deal Galvin,
I think that you can assume that band structure does not depend on
temperature. Furthermore, a realistic temperature corresponds to a Fermi-Dirac
smearing temperature which is very small. I.e. 300K correspond to just 2 mRy.
It would take a h
Hi Galvin,
Is it a problem in semiconductor class? What is wrong with the
"classical" solution?
Yun-Peng
On 09/15/2015 06:57 AM, Khara, Galvin wrote:
Hey,
I was wondering if there was a (relatively) straightforward way of
calculating the carrier concentration of a system using quantum
esp
deal Galvin,
I think that you can assume that band structure does not depend on
temperature. Furthermore, a realistic temperature corresponds to a Fermi-Dirac
smearing temperature which is very small. I.e. 300K correspond to just 2 mRy.
It would take a huge amount of k-points to converge such a
Hey,
I was wondering if there was a (relatively) straightforward way of calculating
the carrier concentration of a system using quantum espresso? I want to apply
an electronic temperature using fermi-dirac smearing, and calculate the carrier
concentration for Silicon at various electronic tempe
