On Thu, 26 Dec 2013 16:07:49 +0000, ct1dmk wrote:
> The target is 4ns, while ideas seemed to be clear at some point, now I'm > having doubts if better to use a MOSFET or a bipolar transistor as the > switch element. Experiments with MOSFETs presented me some difficulties > charging the gate capacitance having some trouble to achieve something > in the 4ns region. Well 4ns seems hard whatever device anyway. > Have a look here "Jim Williams" on eevblog https://tinyurl.com/nhyvtc3 CFO _______________________________________________ time-nuts mailing list -- time-nuts@febo.com To unsubscribe, go to https://www.febo.com/cgi-bin/mailman/listinfo/time-nuts and follow the instructions there.
