Hi everyone, I have been measuring the time the at45db flash memory chip takes to perform every single operation. I need this to calculate the power consumption for the chip. I have been using the BlockStorage component and I have measured single operations time to complete within the At45dbP.nc component.
My understanding of the at45db operation is as follows: - You need to do an ERASE before writing (which surprisingly takes a few microseconds). - When you do a WRITE operation, you are writing a page (max 256 bytes) or two pages (256 to 512 bytes) to the dedicated buffers of the at45db chip. (This operation takes 12 ms for 256 bytes) - At this stage if you keep on writing you will override the data in the dedicated buffers again and again. - To Write data from the buffers to the physical flash you need to do a SYNC operation. Now data is stored (non volatile). (This takes about 17.5 ms for any size). - To Read data from a page, the physical flash memory is accessed, and through the buffers data is retrieved. (This takes around 3.5ms for 256 bytes). - The specs for the at45db chip indicate that the chip consumes: Read Operation (from 7-15 mA depending on the frequency) and Program/Erase Operation (from 12 to 17 mA). I wonder: - What is the current employed for the WRITE operation (since it only accesses the buffers)? - What is the current for the SYNC operation? I guess that would be the Program/Erase current. - Is the ERASE operation so fast due to the fact that it is only used to set some flag and indeed it does not Erase the flash page? Thanks in advance, Ricardo
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