On Tue, Jul 5, 2011 at 10:50, Scott Wood <scottw...@freescale.com> wrote: > On Fri, 1 Jul 2011 23:16:01 -0700 > Ran Shalit <ransha...@gmail.com> wrote: > >> > I wanted to write different parts of the page each time. And now I >> undertsand that >> the ECC is stored for each page, which mean that what I am trying to do , is >> impossible (if I am using ecc), >> i.e. writing the same page without erasing is not allowed when using ecc. Am >> I right about this conclusion ? >
The NAND I a familiar with (Micron) also has a limit on partial page programming, it specifies a max of 4 partial page programming accesses. This is a 2k byte/page device, so I assume this is for mapping 512 byte sectors in storage applications. In MLC flash, I don't believe partial page access is allowed at all. see http://download.micron.com/pdf/presentations/events/flash_mem_summit_jcooke_inconvenient_truths_nand.pdf for an overview as to why. _______________________________________________ U-Boot mailing list U-Boot@lists.denx.de http://lists.denx.de/mailman/listinfo/u-boot