Ok, this is whats going on:
Erasing one of the first 8 blocks erases all blocks. Urjtag flash the first
block ok, but when flashing the next block it also erases the previous
flashed block.
Instead of erasing one block and then program that block, shouldn't it
better first to erase all target blocks and then flash all those blocks ?
That's what hairydairymaid and bootloaders do and never had this issue.
Bye.
2012/2/19 dani <[email protected]>
> Hi I was trying to flash the bootloader in a bcm6348 board. Reading is ok
> and fast (I'm using ejtag_dma). But when I want to write the bootloader,
> some blocks at the start of the flash are filled with FFFF words.
> The weird behavior is: if i flash one sector with a file being the same
> size as the sector, then the verification is ok. I presume stripping my
> bootloader in many files matching the block size and flashing it one by one
> would work.
>
> For example I did this:
> flashmem 0x1E400000 size2000.file
> flash the first block ok
>
> flashmem 0x1E402000 size2000.file
> flash the second block ok
>
> flashmem 0x1E404000 size2000.file
> flash the third block ok
>
> But if I try to flash this three blocks in one command.
> flashmem 0x1E400000 size6000.file
> fails to flash the first three blocks, all FFFF written
>
> So, I think there is some bug in the code, isn't it?, I figure out what's
> happening but I don't have enough skills to patch the code. Perhaps any
> clue about this would help.
>
>
>
>
>
> I'm using a simple dlc5 unbuffered cable. It works ok with hairydairimaid
> in Pracc mode.
>
> The flash chip is detected correctly, it matches to the datasheet of my
> flash chip
>
> flashmem jtag> detectflash 0x1E400000
> Query identification string:
> Primary Algorithm Command Set and Control Interface ID Code: 0x0002
> (AMD/Fujitsu Standard Command Set)
> Alternate Algorithm Command Set and Control Interface ID Code: 0x0000
> (null)
> Query system interface information:
> Vcc Logic Supply Minimum Write/Erase or Write voltage: 2700 mV
> Vcc Logic Supply Maximum Write/Erase or Write voltage: 3600 mV
> Vpp [Programming] Supply Minimum Write/Erase voltage: 0 mV
> Vpp [Programming] Supply Maximum Write/Erase voltage: 0 mV
> Typical timeout per single byte/word program: 128 us
> Typical timeout for maximum-size multi-byte program: 128 us
> Typical timeout per individual block erase: 1024 ms
> Typical timeout for full chip erase: 0 ms
> Maximum timeout for byte/word program: 1024 us
> Maximum timeout for multi-byte program: 4096 us
> Maximum timeout per individual block erase: 16384 ms
> Maximum timeout for chip erase: 0 ms
> Device geometry definition:
> Device Size: 8388608 B (8192 KiB, 8 MiB)
> Flash Device Interface Code description: 0x0002 (x8/x16)
> Maximum number of bytes in multi-byte program: 32
> Number of Erase Block Regions within device: 2
> Erase Block Region Information:
> Region 0:
> Erase Block Size: 8192 B (8 KiB)
> Number of Erase Blocks: 8
> Region 1:
> Erase Block Size: 65536 B (64 KiB)
> Number of Erase Blocks: 127
> Primary Vendor-Specific Extended Query:
> Major version number: 1
> Minor version number: 3
> Address Sensitive Unlock: Required
> Process Technology: CS99
> Erase Suspend: Read/write
> Sector Protect: 1 sectors per group
> Sector Temporary Unprotect: Not supported
> Sector Protect/Unprotect Scheme: 29BDS640 mode (Software Command Locking)
> Simultaneous Operation: Not supported
> Burst Mode Type: Supported
> Page Mode Type: 4 word Page
> ACC (Acceleration) Supply Minimum: 11500 mV
> ACC (Acceleration) Supply Maximum: 12500 mV
> Top/Bottom Sector Flag: Bottom boot device
> Program Suspend: Not supported
>
>
>
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