On 11/23/2016 10:14 AM, Zoran Stojsavljevic wrote: > > Federico, I have here also suggestion for you. You should try to run > only one DDR memory stick, and then record the memory values (since I > see from your logs that they are identical for both memories/DDRs), > and then to try to hard-code them for both sticks, altogether avoiding > raminit.c setup, and see if this improves your situation?!
Hi Zoran and others, I finally flashed again coreboot after trying the Lenovo BIOS. I used the decode-dimms util to dump RAM info while on the Lenovo BIOS with both RAM sticks, and run the same program on the coreboot BIOS with just one stick. Sadly the output on coreboot is the same of the output on Lenovo BIOS so no info gained by this. I will attach the output from the Lenovo BIOS in case it turns out useful. The next step I will try will be to modify raminit.c of Nehalem to accept hardcoded frequency as SandyBridge does, hoping that this will be a temporary fix to get the two DIMMs working.
# decode-dimms version 6231 (2014-02-20 10:54:34 +0100) Memory Serial Presence Detect Decoder By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner, Jean Delvare, Trent Piepho and others Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/7-0050 Guessing DIMM is in bank 1 ---=== SPD EEPROM Information ===--- EEPROM CRC of bytes 0-116 OK (0xFC7B) # of bytes written to SDRAM EEPROM 176 Total number of bytes in EEPROM 256 Fundamental Memory type DDR3 SDRAM Module Type SO-DIMM ---=== Memory Characteristics ===--- Fine time base 1.000 ps Medium time base 0.125 ns Maximum module speed 1333 MHz (PC3-10600) Size 4096 MB Banks x Rows x Columns x Bits 8 x 15 x 10 x 64 Ranks 2 SDRAM Device Width 8 bits Bus Width Extension 0 bits tCL-tRCD-tRP-tRAS 9-9-9-24 Supported CAS Latencies (tCL) 9T, 8T, 7T, 6T, 5T ---=== Timing Parameters ===--- Minimum Write Recovery time (tWR) 15.000 ns Minimum Row Active to Row Active Delay (tRRD) 6.000 ns Minimum Active to Auto-Refresh Delay (tRC) 49.125 ns Minimum Recovery Delay (tRFC) 160.000 ns Minimum Write to Read CMD Delay (tWTR) 7.500 ns Minimum Read to Pre-charge CMD Delay (tRTP) 7.500 ns Minimum Four Activate Window Delay (tFAW) 30.000 ns ---=== Optional Features ===--- Operable voltages 1.5V RZQ/6 supported? Yes RZQ/7 supported? Yes DLL-Off Mode supported? Yes Operating temperature range 0-95 degrees C Refresh Rate in extended temp range 1X Auto Self-Refresh? No On-Die Thermal Sensor readout? No Partial Array Self-Refresh? No Thermal Sensor Accuracy Not implemented SDRAM Device Type Standard Monolithic ---=== Physical Characteristics ===--- Module Height (mm) 30 Module Thickness (mm) 2 front, 2 back Module Width (mm) 67.6 Module Reference Card F ---=== Manufacturer Data ===--- Module Manufacturer Samsung DRAM Manufacturer Samsung Manufacturing Location Code 0x03 Manufacturing Date 2012-W05 Assembly Serial Number 0x006A832D Part Number M471B5273DH0-CH9 Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/7-0051 Guessing DIMM is in bank 2 ---=== SPD EEPROM Information ===--- EEPROM CRC of bytes 0-116 OK (0xFC7B) # of bytes written to SDRAM EEPROM 176 Total number of bytes in EEPROM 256 Fundamental Memory type DDR3 SDRAM Module Type SO-DIMM ---=== Memory Characteristics ===--- Fine time base 1.000 ps Medium time base 0.125 ns Maximum module speed 1333 MHz (PC3-10600) Size 4096 MB Banks x Rows x Columns x Bits 8 x 15 x 10 x 64 Ranks 2 SDRAM Device Width 8 bits Bus Width Extension 0 bits tCL-tRCD-tRP-tRAS 9-9-9-24 Supported CAS Latencies (tCL) 9T, 8T, 7T, 6T, 5T ---=== Timing Parameters ===--- Minimum Write Recovery time (tWR) 15.000 ns Minimum Row Active to Row Active Delay (tRRD) 6.000 ns Minimum Active to Auto-Refresh Delay (tRC) 49.125 ns Minimum Recovery Delay (tRFC) 160.000 ns Minimum Write to Read CMD Delay (tWTR) 7.500 ns Minimum Read to Pre-charge CMD Delay (tRTP) 7.500 ns Minimum Four Activate Window Delay (tFAW) 30.000 ns ---=== Optional Features ===--- Operable voltages 1.5V RZQ/6 supported? Yes RZQ/7 supported? Yes DLL-Off Mode supported? Yes Operating temperature range 0-95 degrees C Refresh Rate in extended temp range 1X Auto Self-Refresh? No On-Die Thermal Sensor readout? No Partial Array Self-Refresh? No Thermal Sensor Accuracy Not implemented SDRAM Device Type Standard Monolithic ---=== Physical Characteristics ===--- Module Height (mm) 30 Module Thickness (mm) 2 front, 2 back Module Width (mm) 67.6 Module Reference Card F ---=== Manufacturer Data ===--- Module Manufacturer Samsung DRAM Manufacturer Samsung Manufacturing Location Code 0x03 Manufacturing Date 2012-W05 Assembly Serial Number 0x006A8319 Part Number M471B5273DH0-CH9 Number of SDRAM DIMMs detected and decoded: 2
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