I need some clarification on changing the parasitic values for a given technology. I am using MOSIS test data as a reference for parasitic values for latest TSMC 0.18um processes run. I can only assume that the resistance property is given in ohm/square. If I am wrong please let me know. Where I am confused is which parasitic capacitance parameter to put in the "Area Cap" and "Perimeter Cap" properties. Do I assume that for each layer it is “layer to substrate” or “layer (n) to layer (n-1)” capacitance? My best guess is layer to substrate capacitance for both. Could somebody please clarify this for me.
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