Dear all,

Thank you very much for your answers and advises!
I have never had any experience in investigations of defects in crystals
before.

Actually, I'm not interested in a very accurate thermodinamics of the
defect.
The most important things I want to know are structural and electronic
band structure
changes due to Ni defect in orthorhombic SbSI ferroelectric crystal.

There are still some questions I would like to find out:

1) how large supercells should I use to reach a converged result?
   The lattice parameters of the host orthorhombic material are:
   a=8.48 A,   b=10.12A,   c=4.08 A, and there are 12 atoms in a unit
cell (4 formula units).
   The Ni atom substitutes the Sb one, and from the experiment it
follows that
   defect atom will behave like Ni+2 ion (Sb behaves in the host
material as Sb+3 ion).

I already performed calculations with 1_1_2 (23 host atoms and 1
defect) and
1_1_3 supercells (35 host atoms and 1 defect)
with the constructed pseudopotential for neutral Ni atom
(the parameters for the pseudopotential construction are the ones,
which I mentiond in my previous letter). The distance between Ni defect
atom
and its periodic repetition in the next cell was in avarage close to
8-10 A in all directions.

The structure of local environment of Ni defect, which I obtained after
full relaxation
of these 2 supercells almost coincide within 0.005 A (the forces on atoms
after optimization are less then 0.005 eV/A). But I'm  confused with the
fact,
that the symmetry of the supercell after full structural optimization
changes from
simple orthorhombic to simple monoclinic (deformation in ab plane).
Experimental
investigations, held with an amount of Ni of 2 mol.%,  show that the
symmetry  of the crystal
with defect is orthorhombic with slightely smaller lattice parameters.

2) Is this fact caused by a  high concentration of defects  or  I'm
doing something wrong?

3) It's not quite clear for me,  why  electron configuration  4s1 3d9
for Ni atom is more preferable,
then 4s2 3d8  one? I have tested ''my'' pseudopotential for
transferability and it was OK.
But anyway, I'm going to try another one with parameters, kindely
proposed by Andrei.

I'm very greatefull for your reasonable remarks. I appreciate it!

I will appreciate any help concerning these questions also!

Best regards,
K.R.

--
K.Rushchanskii, Dr.
Theoretische Physik, Universität Regensburg
93040 Regensburg Germany
tel: +49 (0) 941-943-2466  fax: +49 (0) 941-943-4382


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