It doesn't sound so different to 1N4148 if you can deduce the surface mount
version which will probably have similar capacitance. Vrrm a bit lower,
but...for an urgent situation I would just bend one up and try it.
David
G3UNA
----- Original Message -----
From: "Robie Elms" <[EMAIL PROTECTED]>
To: "Lou" <[EMAIL PROTECTED]>; <elecraft@mailman.qth.net>
Sent: Thursday, July 19, 2007 3:52 PM
Subject: Re: [Elecraft] I need a Ultrahigh-Speed Switching Diode
I suggest contacting Kenwood.
Robie - AJ4F
----- Original Message -----
From: "Lou" <[EMAIL PROTECTED]>
To: <elecraft@mailman.qth.net>
Sent: Thursday, July 19, 2007 9:33 AM
Subject: [Elecraft] I need a Ultrahigh-Speed Switching Diode
Can someone please help me locate this Diode it is used as a surge
absorption Diode in the remote amplifier T/R switching circuit of a
Kenwood TS-50S HF transceiver. I was using the T/R switching port to
switch my MFJ-1026 Deluxe Noise Canceller.
It was working O. K. and I then turn the radio off. The next time I turned
the radio back on it did not work. This was about two or three days later.
The radio was physically disconnected from the antenna but between the
time the radio was turned off then turned back on again there was a bad
electrical storm.
The T/R switching has went permanently shorted in the transmit mode. The
radio is working OK I can transmit and receive ok. Any help locating this
part would be greatly appreciated.
Lou KE4UYP
The Diode is a Sanyo-- Ultrahigh-Speed Switching Diode- LFB01
Silicon Planar Leadless Type
Dimensions
1.4mm diameter
3.4mm long
Specifications
Absolute Maximum Ratings at Ta = 25°C
Electrical Characteristics at Ta = 25°C
Package Dimensions
Features
Highly reliable leadless glass sleeve structure.
Very small size.
Capable of being suface-mounted.
Forward voltage : VF max=1.2V.
Interterminal capacitance : C max=3pF.
Reverse recovery time : trr max=4ns.
Parameter Symbol Conditions LFB01
Peak Reverse Voltage VRM 90 V
Reverse Voltage VR 80 V
Peak Forward Current IFM ® 480 mA
Average Rectified Current IO ® 150 mA
Surge Curent IFSM ® 2 A
Allowable Power Dissipation P ® 300 mW
Junction Temperature Tj ® +175
Storage Temperature Tstg ® –65 to+ 175 °C
Parameter Symbol Conditions
Ratings Unit
min typ max
Forward Voltage VF IF=100mA 1.2 V
Reverse Current IR1 VR=30V 0.1 µA
IR2 At each VR 0.5 µA
Interterminal Capacitance CVR=0V, f=1MHz 3 pF
Reverse Recovery Time trr VR=6V, IF=10mA, RL=50W Max 4 ns
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